New Memory Paradigms: Memristive Phenomena and Neuromorphic Applications: Faraday Discussion 213 (Faraday Discussions)
Synopsis "New Memory Paradigms: Memristive Phenomena and Neuromorphic Applications: Faraday Discussion 213 (Faraday Discussions)"
Atomically scaled "smart" devices, artificial intelligence, neuromorphic functions, alternative logic operations and computing, new memory storage paradigms, ultra-fast/bio-inspired/flexible/transparent/energy-efficient nanoelectronics - these contemporary concepts are driving forces for the progressive development of science and technology, mirroring societal expectations and solving its problems. Inspired by the concept of the memristor (memory + resistor), Redox-based resistive switching Random Access Memories (ReRAM) and Phase Change Memories (PCM) are thought capable of all these operations and functionalities. In addition, researchers aim to use these memristive systems to enable the fundamental properties of life, including order, plasticity, response to stimuli, metabolism, homeostasis, growth, and heredity or reproduction, based on the functionalities of biological systems. This volume, which brings together experts from industry and academia, will cover the fundamentals as well as specific demands and limitations in e.g. materials selection, processing, suitable model systems, technical requirements and the potential device applications, providing a bridge for terminologies, theories, models, and applications. The topics covered in this volume include: Electrochemical metallization ReRAMs (ECM) Valence change ReRAMs (VCM) Phase-change memories (PCM) Synaptic and neuromorphic functions
