Name: single electron spin measurements in submicron si mos-fets random telegraph signal, single electron
Price: 56.39 GBP
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Author: ming xiao
ISBN: 9783836493758

portada single electron spin measurements in submicron si mos-fets random telegraph signal, single electron

Type

Physical Book

Publisher

vdm verlag

Author

ming xiao

Pages

124

ISBN

3836493756

ISBN13

9783836493758

Synopsis "single electron spin measurements in submicron si mos-fets random telegraph signal, single electron"

presented is our measurements of a single electronic spin in the gate oxide of submicron-size silicon field effect transistors. defects near the silicon and silicon dioxide interface have profound effects on the transistor conduction properties. for a ...