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portada Semiconductor Power Devices: Physics, Characteristics, Reliability
Type
Physical Book
Publisher
Language
Inglés
Pages
714
Format
Paperback
Dimensions
23.4 x 15.6 x 3.7 cm
Weight
1.01 kg.
ISBN13
9783319890111
Edition No.
0002

Semiconductor Power Devices: Physics, Characteristics, Reliability

Josef Lutz (Author) · Heinrich Schlangenotto (Author) · Uwe Scheuermann (Author) · Springer · Paperback

Semiconductor Power Devices: Physics, Characteristics, Reliability - Lutz, Josef ; Schlangenotto, Heinrich ; Scheuermann, Uwe

Physical Book

£ 228.66

  • Condition: New
Origin: U.S.A. (Import costs included in the price)
It will be shipped from our warehouse between Friday, July 12 and Friday, July 19.
You will receive it anywhere in United Kingdom between 1 and 3 business days after shipment.

Synopsis "Semiconductor Power Devices: Physics, Characteristics, Reliability"

This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.

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